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GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits
(HEMT)
This course introduces the reader to GaN/SiC based High Electron Mobility Transistors - basic transistor operation, types of structures, their electrical characteristics, design rules and applications in circuit and system for integrated microwave and power circuits. Individual chapters advise the answers for questions that students may have to gain balanced knowledge. Development of this e-learn course was funded by HORIZON2020 project OSIRIS (ECSEL-RIA № 662322).
- Teacher: Arpad Kosa
- Teacher: Jaroslav Kováč
- Teacher: Jaroslav Kovac
- Teacher: Juraj Marek
- Teacher: Robert Szobolovszky