Course: GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits

GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits

for middle school students

Authors: Jaroslav Kováč jr., Róbert Szobolovszký, Arpád Kósa, Aleš Chvála, Juraj Marek, Lubica Stuchlíková, Jaroslav Kováč

© Jaroslav Kováč jr., Arpád Kósa, Róbert Szobolovszký, Aleš Chvála, Juraj Marek, Lubica Stuchlíková, Jaroslav Kováč
Institute of Electronics and Photonics, Ilkovičova 3, 812 19, Bratislava,
2015
- News forum
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- GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits Book
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- A high electron mobility transistor (HEMT) File
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- HEMT Structure File
- 2DEG File
- HEMT applications File
- HEMT logic circuits File
- HEMT working principle File
- HEMT characteristics File
- HEMT vs. MESFET File