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  GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits

  for middle school students

  Authors: Jaroslav Kováč jr., Róbert Szobolovszký, Arpád Kósa, Aleš Chvála, Juraj Marek, Lubica Stuchlíková, Jaroslav Kováč

  © Jaroslav Kováč jr., Arpád Kósa, Róbert Szobolovszký, Aleš Chvála, Juraj Marek, Lubica Stuchlíková, Jaroslav Kováč
  Institute of Electronics and Photonics, Ilkovičova 3, 812 19, Bratislava,
  2015

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  • GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits Book

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  • A high electron mobility transistor (HEMT) File

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  • HEMT Structure File
  • 2DEG File
  • HEMT applications File
  • HEMT logic circuits File
  • HEMT working principle File
  • HEMT characteristics File
  • HEMT vs. MESFET File