Introduction  1  Motivation Logo OSIRIS

  1.3 Course aim

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The main aim of the course “GaN/SiC based High Electron Mobility Transistors for integrated microwave and power circuits” is to introduce the reader to GaN/SiC based High Electron Mobility Transistors - basic transistor operation, types of structures, their electrical characteristics, design rules and applications in circuits and systems for integrated microwave and power circuits. Individual chapters advise the answers for questions that students may have to gain balanced knowledge and provide basic information about present research in the field of microwave and power electronics and the role of HEMTs in this field.

Fig. 1.6 GaN HEMT applications(1)

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(1)  Microsemi Corporation - GaN on SiC HEMT transistor 1011GN-1000V [online
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